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 https://docs.google.com/a/ccu-semicond.net/file/d/0B4xPZ2CBWWOZNl81SEtURzdSQW8/edit?usp=drive_web 

Microscopic and optical investigation of Ge nanoislands on silicon substrates
Z F Krasil’nik, P Lytvyn, D N Lobanov, N Mestres, A V Novikov, J Pascual, M Ya Valakh and V A Yukhymchuk
Nanotechnology 13 (2002) 81–85

We investigate self-assembled nanoislands in heteroepitaxial GeSi systems by means of atomic force microscopy and micro-Raman scattering techniques. We show that the surface diffusion of Si atoms from the substrate to the islands is strongly enhanced when the temperature increases, giving rise to a wider stability range of pyramid-shaped volumes.
https://docs.google.com/a/ccu-semicond.net/file/d/0B4xPZ2CBWWOZWWRfZ0xwR3hGNzQ/edit?usp=drive_web

 Initial stages of chain formation in a single layer of (In,Ga)As quantum dots grown on GaAs (100)
M. Schmidbauer, Zh. M. Wang, Yu. I. Mazur, P. M. Lytvyn, G. J. Salamo, D. Grigoriev, P. Schäfer, R. Köhler and M. Hanke
Appl. Phys. Lett. 91, 093110 (2007); DOI: 10.1063/1.2775801

The self-organized formation of In0.40Ga0.60Asquantum dot chains was investigated using x-ray scattering. Two samples were compared grown on GaAs(100) by molecular beam epitaxy. The first sample with a single layer of In0.40Ga0.60As dots shows weak quantum dot alignment and a corresponding elongated shape along [01-1], while the top layer of a multilayered In0.40Ga0.60As/GaAs sample exhibits extended and highly regular quantum dot chains oriented along [01-1]. Numerical calculations of the three-dimensional strain fields are used to explain the initial stages of chain formation by anisotropicstrain relaxation induced by the elongated dot shape.
 https://docs.google.com/a/ccu-semicond.net/file/d/0B4xPZ2CBWWOZSFo1aWVyYktWVnM/edit?usp=drive_web 
Light-induced mass transport in amorphous chalcogenides: Toward surface plasmon-assisted nanolithography and near-field nanoimaging
M. L. Trunov, P. M. Lytvyn, P. M. Nagy, A. Csik, V. M. Rubish and S. Kökényesi
Phys. Status Solidi B 7/2014, DOI: 10.1002/pssb.201470141 

Surface plasmon (SP)-assisted nanolithography has been introduced as a new technique for producing surface topography variation with sub-wavelength resolution in photosensitive thin films. The technique utilizes near fields generated by specially designed nanoparticles (NPs) of noble metals with different dimensions and shapes incorporated into the matrix of the photoresist. The subject of special interest is the mass-transport processes at nano-scale stimulated in the composite layer (amorphous film-NPs) either by uniform or periodically distributed optical fields. Trunov et al. (pp. 1354-1362) examine two light-sensitive composites (As20Se80/Au NPs and Se/Au NPs) and establish that photoinduced masstransport in these films can be enhanced at the nanoscale by localized plasmonic fields generated in gold NPs. It was found that irradiation by light in the presence of SP resonance roduces profound surface nanostructurizations, and variation in surface topography follows closely and permanently the underlying near-field intensity pattern. An appropriate model of mass-transport based on the existence of moving anisotropic dipolar units and internal electric field in chalcogenide glasses as a main driving force of this movement is suggested.




    




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